Atomically thin In₂O₃ field-effect transistors with 10¹⁷ current on/off ratio

Recent advances have enabled the demonstration of record high-performance atomically thin n-type indium oxide (In2O3) field-effect transistors with low thermal budget suitable for back-end-of-line logic or memory applications. By using ultra-thin layers In2O3, its degenerate carrier density is suppressed so that it can be modulated by conventional dielectric gating. These devices high on-currents due to mobility and contact resistance; meanwhile they exceptionally off-currents wide bandgap. For both low-power memory, off-state performance should understood in more detail, although are constrained limits traditional measurement techniques. In this Letter, we systematically probe off-current In2O3 adopting a channel geometry temperature-dependent electrical measurements demonstrate potential current on/off ratios 1017 on transistors.